Q62702-A1028 Description
BAT 62-02W Silicon Schottky Diode Low barrier diode for detectors up to GHz frequencies 2 1 VES05991 ESD: Parameter Symbol Values min. DC characteristics Reverse current typ.
- Part: Q62702-A1028
- Manufacturer: Siemens Semiconductor Group
- Size: 26.35 KB
Related Siemens Semiconductor Group Datasheets
| Part Number | Description |
|---|---|
| Q62702-A1028 | Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
| Q62702-A1025 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1004 | Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A1010 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |