| Part number | Q62702-A1047 |
|---|---|
| Datasheet | Q62702-A1047_SiemensSemiconductorGroup.pdf |
| File Size | 19.42 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Preliminary data Silicon RF Switching Diode (Low loss/ low capacitance PIN-diode Band switch for TV-tuners) |
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+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Mar-04-1996 BAR 65-03W at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A1041 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1042 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1043 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1045 | Silicon PIN Diode |
| Q62702-A1046 | Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high speed switching) |
| Q62702-A1004 | Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A1010 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
| Q62702-A1025 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
