| Part number | Q62702-A1067 |
|---|---|
| Datasheet | Q62702-A1067_SiemensSemiconductorGroup.pdf |
| File Size | 141.08 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Schottky Diode |
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2) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1 cm2 Cu. Semiconductor Group 1 02.96 BAS 40W at TA = 25 °C, unless otherwise specified. DC Characteristics Breakdown voltage I(BR) = 10 µA Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 30 V VR = 40 V Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance Value typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A1065 | Silicon Schottky Diode |
| Q62702-A1066 | Silicon Schottky Diode |
| Q62702-A1068 | Silicon Schottky Diode |
| Q62702-A1069 | Silicon Schottky Diode |
| Q62702-A1004 | Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A1010 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
| Q62702-A1025 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1028 | Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
