| Part number | Q62702-A1084 |
|---|---|
| Datasheet | Q62702-A1084_SiemensSemiconductorGroup.pdf |
| File Size | 68.05 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon RF Switching Diode |
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Parameter Reverse current VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 1 V,f = 1 MHz VR = 3 V,f = 1 MHz Forward resistance Symbol min. 0.92 1 0.92 0.5 0.14 max.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A1004 | Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A1010 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
| Q62702-A1025 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1028 | Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
| Q62702-A1028 | Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
| Q62702-A1030 | Silicon Switching Diode Array (For high speed switching applications Common cathode) |
| Q62702-A1031 | Silicon Switching Diode Array (For high speed switching applications Common anode) |
| Q62702-A1036 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
