Q62702-A1084 Key Features
- Silicon RF Switching Diode Design for use in shunt configuration Hight shunt signal isolation Low shunt insert
- Part: Q62702-A1084
- Manufacturer: Siemens Semiconductor Group
- Size: 68.05 KB
Related Siemens Semiconductor Group Datasheets
| Part Number | Description |
|---|---|
| Q62702-A1004 | Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A1010 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
| Q62702-A1025 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Q62702-A1084 Description
Parameter Reverse current VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 1 V,f = 1 MHz VR = 3 V,f = 1 MHz Forward resistance Symbol min. 0.92 1 0.92 0.5 0.14 max.