| Part number | Q62702-A109 |
|---|---|
| Datasheet | Q62702-A109_SiemensSemiconductorGroup.pdf |
| File Size | 86.03 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Switching Diodes |
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Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 01.97 BAW 78 A … BAW 78 D at TA = 25 ˚C, unless otherwise specified. Unit V(BR) 50 100 200 400 VF IR 1 50 1.6 2 V V µA Pulse generator:.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A109 | Silicon Switching Diode Array |
| Q62702-A1097 | Silicon Switching Diode Array |
| Q62702-A1004 | Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A1010 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
| Q62702-A1025 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1028 | Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
| Q62702-A1028 | Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
| Q62702-A1030 | Silicon Switching Diode Array (For high speed switching applications Common cathode) |
