| Part number | Q62702-A1473 |
|---|---|
| Datasheet | Q62702-A1473_SiemensSemiconductorGroup.pdf |
| File Size | 22.93 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon PIN Diode Array (Surge protection device Two PIN diodes/ series configuration) |
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Parameter Reverse current IR = 5 µA Forward voltage IF = 50 mA Diode capacitance VR = 35 V,f=1M Hz VR = 0 V ,f=100 MHz Forward resistance Symbol min. 0.95 0.4 0.35 1.5 0.7 2 max.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A145 | SILICON PIN DIODES |
| Q62702-A1004 | Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A1010 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
| Q62702-A1025 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
| Q62702-A1028 | Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
| Q62702-A1028 | Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
| Q62702-A1030 | Silicon Switching Diode Array (For high speed switching applications Common cathode) |
| Q62702-A1031 | Silicon Switching Diode Array (For high speed switching applications Common anode) |
