| Part number | Q62702-A3471 |
|---|---|
| Datasheet | Q62702-A3471_SiemensSemiconductorGroup.pdf |
| File Size | 33.09 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Switching Diode (Switching applications High breakdown voltage) |
|
|
Parameter DC characteristics Breakdown voltage Symbol min. tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Oscillograph:.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A3470 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) |
| Q62702-A3473 | NPN Silicon AF Transistor |
| Q62702-A3474 | PNP Silicon AF Transistor |
| Q62702-A3461 | Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
| Q62702-A3466 | Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes) |
| Q62702-A3468 | Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) |
| Q62702-A3469 | Silicon Schottky Diode Array (General-purpose diode for high-speed switching Circuit protection Voltage clamping) |
| Q62702-A376 | Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
| Q62702-A388 | Silicon Switching Diode (For high-speed switching) |
| Q62702-A0042 | Silicon Crossover Ring Quad Schottky Diode |
