Q62702-A3471 Description
Parameter DC characteristics Breakdown voltage Symbol min. tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Oscillograph:.
Q62702-A3471 is Silicon Switching Diode (Switching applications High breakdown voltage) manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| Q62702-A3470 | Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring) |
| Q62702-A3473 | NPN Silicon AF Transistor |
| Q62702-A3474 | PNP Silicon AF Transistor |
| Q62702-A3461 | Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
| Q62702-A3466 | Silicon Switching Diode Array (For high-speed switching applications Electrical insulated diodes) |
Parameter DC characteristics Breakdown voltage Symbol min. tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50Ω Oscillograph:.