Q62702-A504 Datasheet

Manufacturer: Siemens Semiconductor Group (now Infineon)

Datasheet Details

Part number	Q62702-A504
Datasheet	Q62702-A504_SiemensSemiconductorGroup.pdf
File Size	67.84 KB
Manufacturer	Siemens Semiconductor Group (now Infineon)
Description	Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)

Q62702-A504 Overview

Semiconductor Group 1 10 94 BAT 15-04 at TA = 25 °C, unless otherwise specified. DC Characteristics Breakdown voltage IR = 5 µ A Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching Value typ.

More Datasheets from Siemens Semiconductor Group (now Infineon)

See all Siemens Semiconductor Group (now Infineon) datasheets

Part Number	Description
Q62702-A504	Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching)
Q62702-A0042	Silicon Crossover Ring Quad Schottky Diode
Q62702-A0043	Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators)
Q62702-A0062	Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type)
Q62702-A0960	Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type)
Q62702-A1004	Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies)
Q62702-A1006	Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators)
Q62702-A1010	Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz)
Q62702-A1017	Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators)
Q62702-A1025	Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Datasheet Details

Q62702-A504 Overview

More Datasheets from Siemens Semiconductor Group (now Infineon)

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