| Part number | Q62702-A504 |
|---|---|
| Datasheet | Q62702-A504_SiemensSemiconductorGroup.pdf |
| File Size | 67.84 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
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Semiconductor Group 1 10 94 BAT 15-04 at TA = 25 °C, unless otherwise specified. DC Characteristics Breakdown voltage IR = 5 µ A Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching Value typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A504 | Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) |
| Q62702-A0042 | Silicon Crossover Ring Quad Schottky Diode |
| Q62702-A0043 | Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A0062 | Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
| Q62702-A0960 | Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
| Q62702-A1004 | Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
| Q62702-A1006 | Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers/ phase detectors and modulators) |
| Q62702-A1010 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
| Q62702-A1017 | Silicon Dual Schottky Diode (High barrier diode for balanced mixers/ phase detectors and modulators) |
| Q62702-A1025 | Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
