Q62702-A688 Datasheet | Siemens Semiconductor Group

Silicon Switching Diode Array For high-speed switching applications q mon anode q BAW 56 Type BAW 56 Marking A1s Ordering Code (tape and reel) Q62702-A688 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 31 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFS Ptot Tj Tstg Values 70 70 200 4.5 330 150 - 65 … + 150 Unit V m A A m W ˚C 500 360 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group BAW 56 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 1 m A IF = 10 m A IF = 50 m A IF = 150 m A Reverse current VR = 70...