Q62702-A712 Overview
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAW 101 at TA = 25 ˚C, unless otherwise specified. Unit V(BR) VF IR 300 1.3 V 150 50 nA µA Pulse generator:.
| Part number | Q62702-A712 |
|---|---|
| Datasheet | Q62702-A712_SiemensSemiconductorGroup.pdf |
| File Size | 61.60 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Switching Diode Array (Electrically insulated high-voltage medium-speed diodes) |
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Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAW 101 at TA = 25 ˚C, unless otherwise specified. Unit V(BR) VF IR 300 1.3 V 150 50 nA µA Pulse generator:.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A711 | Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
| Q62702-A718 | Silicon Switching Diode |
| Q62702-A723 | SILICON PIN DIODES |
| Q62702-A730 | Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
| Q62702-A731 | Silicon PIN Diodes |
| Q62702-A733 | Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
| Q62702-A764 | silicon schottky diode (RF detector/ Low-power mixer/ Zerobias/ Very low capacitance/ for frequencies up to 25 GHz) |
| Q62702-A77 | Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes) |
| Q62702-A771 | Silicon Switching Diodes (For high-speed switching High breakdown voltage Common cathode) |
| Q62702-A772 | Silicon PIN Diodes |