Q62702-A712 Datasheet | Siemens Semiconductor Group

Silicon Switching Diode Array q BAW 101 Electrically insulated high-voltage medium-speed diodes Type BAW 101 Marking JPs Ordering Code (tape and reel) Q62702-A712 Pin Configuration Package1) SOT-143 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS ≤ 35 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFM IFS Ptot Tj Tstg Values 300 300 250 500 4.5 350 150 - 65 … + 150 Unit V m A A m W ˚C 470 330 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group BAW 101 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 100 m A Reverse current VR = 250 V VR = 250 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 m A, IR = 10 m A, RL = 100 Ω measured at IR = 1 m A Test circuit for reverse recovery time CD trr - - 6 1 - - p F µs Values typ. max. Unit V(BR) VF IR - -...