Q62702-A772 Overview
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BAR 14-1 … BAR 16-1 per Diode at TA = 25 ˚C, unless otherwise specified. IR VF CT rf gp τL Values typ.
| Part number | Q62702-A772 |
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| Datasheet | Q62702-A772_SiemensSemiconductorGroup.pdf |
| File Size | 69.41 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon PIN Diodes |
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Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm. Semiconductor Group 1 07.94 BAR 14-1 … BAR 16-1 per Diode at TA = 25 ˚C, unless otherwise specified. IR VF CT rf gp τL Values typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
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| Q62702-A773 | Silicon PIN Diodes |
| Q62702-A774 | Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
| Q62702-A775 | Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
| Q62702-A776 | Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
| Q62702-A777 | Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
| Q62702-A778 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A779 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A711 | Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |