Q62702-A781 Datasheet | Siemens Semiconductor Group

Silicon Switching Diodes BAW 79 A … BAW 79 D For high-speed switching q High breakdown voltage q mon cathode q Type BAW 79 A BAW 79 B BAW 79 C BAW 79 D Marking GE GF GG GH Ordering Code (tape and reel) Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733 Pin Configuration Package1) SOT-89 Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current t = 1 µs Total power dissipation TS = 115 ˚C Junction temperature Symbol BAW VR VRM IF IFM IFS Ptot Tj 50 50 Values BAW BAW 100 100 1 1 10 1 150 - 65 … + 150 W ˚C 200 200 Unit BAW 400 400 A V Storage temperature range Tstg Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ 175 35 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group BAW 79 A … BAW 79 D Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA BAW 79 A BAW 79 B BAW 79 C BAW 79 D Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VRmax VR = VRmax, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 m A, IR = 200 m A, RL = 100 Ω measured at IR = 20 m A Test circuit for reverse recovery time CD trr - - 10 1 - - p F µs Values typ. max. Unit V(BR) 50 100 200 400 VF - - IR - - - - 1...