| Part number | Q62702-A917 |
|---|---|
| Datasheet | Q62702-A917_SiemensSemiconductorGroup.pdf |
| File Size | 66.93 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
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Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAS 79 A … BAS 79 D at TA = 25 ˚C, unless otherwise specified. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) BAS 79 A BAS 79 B BAS 79 C BAS 79 D VF IR 1 50 1.6 2 µA Values typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A910 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A911 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A912 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A913 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A914 | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
| Q62702-A915 | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
| Q62702-A916 | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
| Q62702-A918 | Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) |
| Q62702-A919 | Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode) |
| Q62702-A920 | Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) |
