| Part number | Q62702-A921 |
|---|---|
| Datasheet | Q62702-A921_SiemensSemiconductorGroup.pdf |
| File Size | 98.38 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series) |
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Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAV 199 per Diode at TA = 25 ˚C, unless otherwise specified. Unit V(BR) VF 70 V mV IR 900 1000 1100 1250 nA 5 80 Test circuit for reverse recovery time Pulse generator:.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A920 | Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode) |
| Q62702-A922 | Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode) |
| Q62702-A926 | Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching) |
| Q62702-A910 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A911 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A912 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A913 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A914 | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
| Q62702-A915 | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
| Q62702-A916 | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
