Datasheet4U Logo Datasheet4U.com

Q62702-A922 - Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode)

📥 Download Datasheet

Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
Q62702-A920 Silicon Low Leakage Diode Array (Low leakage applications Medium speed switching times Common cathode)
Q62702-A921 Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Connected in series)
Q62702-A926 Silicon Schottky Diodes (For mixer applications in the VHF/UHF range For high-speed switching)
Q62702-A910 Silicon Switching Diodes (Switching applications High breakdown voltage)
Q62702-A911 Silicon Switching Diodes (Switching applications High breakdown voltage)
Q62702-A912 Silicon Switching Diodes (Switching applications High breakdown voltage)
Q62702-A913 Silicon Switching Diodes (Switching applications High breakdown voltage)
Q62702-A914 Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)
Q62702-A915 Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)
Q62702-A916 Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Low Leakage Diode Array Low-leakage applications q Medium speed switching times q Common anode q BAW 156 Type BAW 156 Marking JZs Ordering Code (tape and reel) Q62702-A922 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 35 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFS Ptot Tj Tstg Values 70 70 200 4.5 250 150 – 65 … + 150 Unit V mA A mW ˚C 600 460 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.