| Part number | Q62702-A930 |
|---|---|
| Datasheet | Q62702-A930_SiemensSemiconductorGroup.pdf |
| File Size | 34.20 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon PIN Diode |
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BA 586 Silicon PIN Diode Preliminary Data q q q BA 586 Current-controlled RF resistor for switching and attenuating applications. BA 586 at TA = 25 ˚C, unless otherwise specified. VF IR CT rf 6.5 gp LS 2400 58 7.8 40 2 10 µS Values typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A932 | Silicon PIN Diode |
| Q62702-A938 | Silicon RF Switching Diode (Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance) |
| Q62702-A910 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A911 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A912 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A913 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A914 | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
| Q62702-A915 | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
| Q62702-A916 | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
| Q62702-A917 | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
