Q62702-A910- Silicon Switching Diodes (Switching applications High breakdown voltage)
Q62702-A911- Silicon Switching Diodes (Switching applications High breakdown voltage)
Q62702-A912- Silicon Switching Diodes (Switching applications High breakdown voltage)
Q62702-A913- Silicon Switching Diodes (Switching applications High breakdown voltage)
Q62702-A914- Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)
Q62702-A915- Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)
Q62702-A916- Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode)
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BAT 18
Silicon RF Switching Diode
q q
BAT 18 …
Low-loss VHF/UHF switch above 10 MHz Pin diode with low forward resistance
Type BAT 18 BAT 18-04
Marking A2 AU
Ordering Code Pin Configuration Q62702-A787 Q62702-A938
Package1) SOT 23
BAT 18-05
AS
Q62702-A940
BAT 18-06
AT
Q62702-A942
Maximum Ratings per Diode Parameter Reverse voltage Forward current Operating and storage temperature range Thermal Resistance Junction - ambient Rth JA
≤
Symbol VR IF Top Tstg
Values 35 100
Unit V mA
– 55 … + 150 ˚C
450
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
1
07.94
BAT 18...
Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified.