| Part number | Q62702-A950 |
|---|---|
| Datasheet | Q62702-A950_SiemensSemiconductorGroup.pdf |
| File Size | 28.95 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon RF Switching Diode |
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Parameter Forward voltage IF = 100 mA Reverse current VR = 20 V Diode capacitance f = 1 MHz VR = 1 V VR = 3 V Forward resistance f = 100 MHz IF = 3 mA IF = 10 mA Reverse resistance VR = 1 V, f = 100 MHz Series inductance Symbol min. 1 20 V nA pF Unit Diode capacitance CT = f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Semiconductor Group.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A95 | Silicon Switching Diodes (High-speed/ high-voltage switch) |
| Q62702-A952 | Silicon PIN Diode |
| Q62702-A954 | Silicon PIN Diode |
| Q62702-A910 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A911 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A912 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A913 | Silicon Switching Diodes (Switching applications High breakdown voltage) |
| Q62702-A914 | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
| Q62702-A915 | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
| Q62702-A916 | Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) |
