Q62702-B0825 Datasheet | Siemens Semiconductor Group

BBY 53-03W Silicon Tuning Diode Preliminary data - High Q hyperabrupt tuning diode - Designed for low tuning voltage operation for VCO's in mobile munications equipment - High ratio at low reverse voltage Type BBY 53-03W Marking Ordering Code white/5 Q62702-B0825 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 6 20 - 55 ... + 150 - 55 ... + 150 Unit V m A °C VR IF Top Tstg Semiconductor Group Sep-11-1996 BBY 53-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit 10 200 n A VR = 4 V, TA = 25 °C VR = 4 V, TA = 65 °C AC characteristics Diode capacitance 4.8 1.85 5.3 2.4 2.2 0.37 0.12 2 5.8 3.1 p F VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Capacitance ratio CT1/CT3 1.8 2.6 Ω p F n H - VR = 1 V, VR = 3 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1...