Q62702-B0862
Q62702-B0862 is Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) manufactured by Siemens Semiconductor Group.
BBY 53-02W
Silicon Tuning Diode Preliminary data
- High Q hyperabrupt tuning diode
- Designed for low tuning voltage operation for VCO’s in mobile munications equipment
- High ratio at low reverse voltage
VES05991
Type BBY 53-02W
Marking L
Ordering Code Q62702-B0862
Pin Configuration 1=C 2=A
Package SCD-80
Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 6 20 -55 ...+150 -55 ...+150 Unit V m A °C
VR IF T op T stg
Semiconductor Group Semiconductor Group
Au 1998-11-01 -20-1998
BBY 53-02W
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 10 200
Unit
IR IR
- n A
VR = 4 V
Reverse current
VR = 4 V, TA = 65 °C
AC characteristics Diode capacitance
4.8 1.85 1.8 5.3 2.4 2.2 0.37 0.12 1.8 5.8 3.1 2.6
- p F
VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz
Capacitance ratio
CT1/C T3 rs CC Ls
Ω p F n...
