Q62702-B580 Overview
+ 150 mA °C Unit V VR VRM IF Top Tstg RthJA ≤ 450 K/W Semiconductor Group 1 Jan-08-1997 BB 535 at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.
| Part number | Q62702-B580 |
|---|---|
| Datasheet | Q62702-B580_SiemensSemiconductorGroup.pdf |
| File Size | 23.71 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio/ low series resistance) |
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+ 150 mA °C Unit V VR VRM IF Top Tstg RthJA ≤ 450 K/W Semiconductor Group 1 Jan-08-1997 BB 535 at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-B583 | Silicon Tuning Diode (For tuning UHF and VHF TV Tuners Large capacitance ratio/ low series resistance) |
| Q62702-B586 | Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) |
| Q62702-B589 | Silicon Variable Capacitance Diode (For Hyperband TV/VTR tuners/ Bd I) |
| Q62702-B570 | Silicon Variable Capacitance Diode (For tuning of extended frequency bands in VHF TV/VTR tuners) |
| Q62702-B577 | Silicon Variable Capacitance Diode (For VHF tuned circuit applications High figure of merit) |
| Q62702-B592 | Silicon Variable Capacitance Diode (Frequency range up to 2 GHz special design for use in TV-sat indoor units) |
| Q62702-B599 | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
| Q62702-B0825 | Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
| Q62702-B0839 | Silicon Tuning Diode (For VHF 2-Band-hyperband-TV-tuners Very high capacitance ratio Low series resistance) |
| Q62702-B0853 | Silicon Tuning Diode (For UHF-TV-tuners High capacitance ratio Low series inductance) |