Q62702-B664 Description
+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-04-1997 BBY 52-03W at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.
Q62702-B664 is Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| Q62702-B663 | Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
| Q62702-B607 | Silicon Variable Capacitance Diode (For UHF and VHF TV/VTR tuners Large capacitance ratio Low series resistance) |
| Q62702-B62 | NPN SILICON EPIBASE TRANSISTORS |
| Q62702-B62 | PNP SILICON EPIBASE TRANSISTORS |
| Q62702-B628 | Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-04-1997 BBY 52-03W at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.