Q62702-B664 Overview
+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-04-1997 BBY 52-03W at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.
| Part number | Q62702-B664 |
|---|---|
| Datasheet | Q62702-B664_SiemensSemiconductorGroup.pdf |
| File Size | 18.89 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
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+ 150 Unit V mA °C VR IF Top Tstg Semiconductor Group 1 Feb-04-1997 BBY 52-03W at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-B663 | Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
| Q62702-B607 | Silicon Variable Capacitance Diode (For UHF and VHF TV/VTR tuners Large capacitance ratio Low series resistance) |
| Q62702-B62 | NPN SILICON EPIBASE TRANSISTORS |
| Q62702-B62 | PNP SILICON EPIBASE TRANSISTORS |
| Q62702-B628 | Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
| Q62702-B63 | NPN SILICON EPIBASE TRANSISTORS |
| Q62702-B63 | PNP SILICON EPIBASE TRANSISTORS |
| Q62702-B631 | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
| Q62702-B673 | Silicon Variable Capacitance Diode (For FM radio tuner with extended frequency band High tuning ratio low supply voltage car radio) |
| Q62702-B683 | Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV/ VTR tuners) |