Q62702-B673 Overview
+ 150 ≤ 600 mA °C Unit V VR VRM IF Top Tstg RthJA K/W Semiconductor Group 1 Oct-10-1996 BB 914 at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.
| Part number | Q62702-B673 |
|---|---|
| Datasheet | Q62702-B673_SiemensSemiconductorGroup.pdf |
| File Size | 32.91 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Variable Capacitance Diode (For FM radio tuner with extended frequency band High tuning ratio low supply voltage car radio) |
|
|
|
+ 150 ≤ 600 mA °C Unit V VR VRM IF Top Tstg RthJA K/W Semiconductor Group 1 Oct-10-1996 BB 914 at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-B607 | Silicon Variable Capacitance Diode (For UHF and VHF TV/VTR tuners Large capacitance ratio Low series resistance) |
| Q62702-B62 | NPN SILICON EPIBASE TRANSISTORS |
| Q62702-B62 | PNP SILICON EPIBASE TRANSISTORS |
| Q62702-B628 | Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
| Q62702-B63 | NPN SILICON EPIBASE TRANSISTORS |
| Q62702-B63 | PNP SILICON EPIBASE TRANSISTORS |
| Q62702-B631 | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
| Q62702-B663 | Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
| Q62702-B664 | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
| Q62702-B683 | Silicon Variable Capacitance Diode (For tuning of extended frequency band in VHF TV/ VTR tuners) |