Q62702-C2157
Q62702-C2157 is NPN Silicon Double Transistors (To be used as a current mirror Good thermal coupling and VBE matching) manufactured by Siemens Semiconductor Group.
NPN Silicon Double Transistors
Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q
BCV 61
Type BCV 61 A BCV 61 B BCV 61 C
Marking 1Js 1Ks 1Ls
Ordering Code (tape and reel) Q62702-C2155 Q62702-C2156 Q62702-C2157
Pin Configuration
Package1) SOT-143
Maximum Ratings Parameter Collector-emitter voltage (transistor T1) Collector-base voltage (open emitter) (transistor T1) Emitter-base voltage Collector current Collector peak current Base peak current (transistor T1) Total power dissipation, TS ≤ 99 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point
1) 2)
Symbol VCE0 VCB0 VEBS IC ICM IBM Ptot Tj Tstg
Values 30 30 6 100 200 200 300 150
- 65 … + 150
Unit V m A m W ˚C
Rth JA Rth JS
≤ ≤
240 170
K/W
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
BCV 61
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 m A, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 ˚C DC current gain1) IC = 0.1 m A, VCE = 5 V IC = 2 m A, VCE = 5 V V(BR)CE0 V(BR)CB0 V(BR)EBS ICB0
- - h FE BCV 61 A BCV 61 B BCV 61 C VCEsat
- - VBEsat
- - VBE 580
- 660
- 700 770 700 900
- - 90 200 250 600 100 110 200...
