Q62702-C2517 Description
Symbol Values Parameter Unit max. 100 20 100 nA µA nA V min. DC Characteristics Collector-emitter breakdown voltage typ.
- Part: Q62702-C2517
- Manufacturer: Siemens Semiconductor Group
- Size: 30.02 KB
Related Siemens Semiconductor Group Datasheets
| Part Number | Description |
|---|---|
| Q62702-C25 | NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage) |
| Q62702-C252 | PNP SILICON TRANSISTORS |
| Q62702-C2529 | NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain) |
| Q62702-C2532 | PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| Q62702-C2537 | NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain) |