| Part number | Q62702-C2597 |
|---|---|
| Datasheet | Q62702-C2597_SiemensSemiconductorGroup.pdf |
| File Size | 30.18 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
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Symbol Values Parameter Unit max. 100 20 100 nA µA nA V min. DC Characteristics Collector-emitter breakdown voltage typ.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-C2592 | PNP Silicon AF Transistor (For AF driver and output stages High collector current) |
| Q62702-C2593 | PNP Silicon AF Transistor (For AF driver and output stages High collector current) |
| Q62702-C2594 | PNP Silicon AF Transistor (For AF driver and output stages High collector current) |
| Q62702-C2595 | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2596 | PNP Silicon AF Power Transistor (For AF driver and output stages High collector current) |
| Q62702-C25 | NPN Silicon AF Switching Transistor (For general AF applications High breakdown voltage) |
| Q62702-C2517 | PNP Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) |
| Q62702-C252 | PNP SILICON TRANSISTORS |
| Q62702-C2529 | NPN Silicon AF Transistor Array (For AF input stages and driver applications High current gain) |
| Q62702-C2532 | PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
