Q62702-C2597 Description
Symbol Values Parameter Unit max. 100 20 100 nA µA nA V min. DC Characteristics Collector-emitter breakdown voltage typ.
Q62702-C2597 is NPN Silicon AF Power Transistor (Drain switch for RF power amplifier stages For AF driver and output stages High collector current) manufactured by Siemens Semiconductor Group.
| Part Number | Description |
|---|---|
| Q62702-C2592 | PNP Silicon AF Transistor (For AF driver and output stages High collector current) |
| Q62702-C2593 | PNP Silicon AF Transistor (For AF driver and output stages High collector current) |
| Q62702-C2594 | PNP Silicon AF Transistor (For AF driver and output stages High collector current) |
| Q62702-C2595 | NPN Silicon AF Transistors (For AF driver and output stages High collector current) |
| Q62702-C2596 | PNP Silicon AF Power Transistor (For AF driver and output stages High collector current) |
Symbol Values Parameter Unit max. 100 20 100 nA µA nA V min. DC Characteristics Collector-emitter breakdown voltage typ.