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Q62702-C825 - NPN Silicon Darlington Transistor (High current gain High collector current)

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BC 517 NPN Silicon Darlington Transistor High current gain q High collector current q Complementary type: BC 516 (PNP) q 2 1 1 3 BC 517 Type BC 517 Marking – Ordering Code Q62702-C825 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values 30 40 10 500 800 100 200 625 150 – 65 … + 150 Unit V mA mW ˚C 200 135 K/W 1) 2) For detailed information see chapter Package Outlines.
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