| Part number | Q62702-D1005 |
|---|---|
| Datasheet | Q62702-D1005_SiemensSemiconductorGroup.pdf |
| File Size | 47.44 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
|
|
Silicon Schottky Diodes q q q BAT 14- … 4 Medium barrier diodes for detector and mixer applications Hermetical ceramic package For frequencies up to 40 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! 4 BAT at TA = 25 ˚C, unless otherwise specified.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-D1019 | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
| Q62702-D1026 | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
| Q62702-D1036 | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
| Q62702-D1040 | PNP SILICON PLANAR TRANSISTOR |
| Q62702-D1041 | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
| Q62702-D1051 | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
| Q62702-D1056 | Silicon Schottky Diodes (Medium barrier diodes for detector and mixer applications Hermetical ceramic package) |
| Q62702-D106 | NPN SILICON TRANSISTORS |
| Q62702-D106-P | NPN SILICON TRANSISTORS |
| Q62702-D106-V1 | NPN SILICON TRANSISTORS |
