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SFH405 Datasheet Gaas Infrared Emitter

Manufacturer: Siemens Semiconductor Group (now Infineon)

Overview: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 2.84 2.24 SFH 405 2.7 2.5 2.1 1.5 2.54 spacing Collector (SFH 305) Cathode (SFH 405) 1.15 0.90 1) 0.5 0.4 Approx. weight 0.02 g GEO06137 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, τ ≤ 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Wellenlänge der Strahlung Wavelength at peak emission IF = 40 mA, tp = 20 ms Spektrale Bandbreite bei 50 % von Imax Spectral bandwidt

Key Features

  • q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q High radiant intensity q High pulse handling capability q Available in groups q Same package as SFH 305.

Similar Datasheet

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More Datasheets from Siemens Semiconductor Group (now Infineon)

Part Number Description
SFH400 GaAs Infrared Emitter
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SFH421 GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package
SFH425 GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
SFH426 GaAlAs-IR-Lumineszenzdiode in SMT-Gehause GaAlAs Infrared Emitter in SMT Package
SFH431 INFRARED EMITTER

SFH405 Distributor