SFH415 - GaAs Infrared Emitters

Product Overview

Siemens Semiconductor Group

Datasheet Details

Part number	SFH415
Manufacturer	Siemens Semiconductor Group
File Size	47.43 KB
Description	GaAs Infrared Emitters
Datasheet	SFH415 Datasheet
Additional preview pages of the SFH415 datasheet.

Product details

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol Wert Value 55 + 100 100 5 100 3 165 450 Einheit Unit °C °C V mA A mW K/W Top; Tstg Tj VR IF IFSM Ptot RthJA Semiconductor Group 2 1997-11-01 SFH 415 SFH 416 Kennwerte (TA = 25 °C) Cha

Features

q GaAs infrared emitting diodes, fabricated in q q q q q im Schmelzepitaxieverfahren Gute Linearität (Ie = f [IF]) bei hohen Strömen Sehr hoher Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit SFH 415: Gehäusegleich mit SFH 300, SFH 203 a liquid phase epitaxy process Good linearity (Ie = f [IF]) at high currents High efficiency High reliability High pulse handling capability SFH 415: Same package as SFH 300, SFH 203 Anwendungen q IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Vi.

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Published: May 20, 2005 |