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SFH415 Datasheet Gaas Infrared Emitters

Manufacturer: Siemens Semiconductor Group (now Infineon)

Overview: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 9.0 8.2 spacing 2.54mm 0.4 0.8 1.8 1.2 7.8 7.5 5.9 5.5 0.4 0.6 Area not flat Chip position Approx. weight 0.2 g GEO06645 0.6 0.4 2.54 mm spacing 0.8 0.4 Area not flat 6.9 6.1 5.7 5.5 5.9 5.5 ø5.1 ø4.8 Approx. weight 0.4 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward curre

Key Features

  • q GaAs infrared emitting diodes, fabricated in q q q q q im Schmelzepitaxieverfahren Gute Linearität (Ie = f [IF]) bei hohen Strömen Sehr hoher Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit SFH 415: Gehäusegleich mit SFH 300, SFH 203 a liquid phase epitaxy process Good linearity (Ie = f [IF]) at high currents High efficiency High reliability High pulse handling capability SFH 415: Same package as SFH 300, SFH 203 Anwendungen q IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Vi.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
OSRAM Logo SFH415 GaAs Infrared Emitters OSRAM

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