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SFH495P - GaAs Infrared Emitter

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrspannung Reverse voltage Stoßstrom, tp = 200 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Wellenlänge der Strahlun

Features

  • q Stimulated emitter with high efficiency q Laser diode in diffuse package q Suitable esp. for pulse operation at high Wirkungsgrad Laserdiode in diffusem Gehäuse Besonders geeignet für Impulsbetrieb bei hohen Strömen Hohe Zuverlässigkeit Gegurtet lieferbar current q High reliability q Available on tape and reel Anwendungen q Datenübertragung q Fernsteuerungen q „Messen, Steuern, Regeln“.

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Datasheet preview – SFH495P

Datasheet Details

Part number SFH495P
Manufacturer SIEMENS
File Size 43.77 KB
Description GaAs Infrared Emitter
Datasheet download datasheet SFH495P Datasheet
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Full PDF Text Transcription

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GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P SFH 4552 29 27 5.0 4.2 Anode 2.54 mm spacing 5.9 5.5 0.6 0.4 0.8 0.4 Area not flat Chip position GEX06971 Area not flat 0.6 0.4 6.9 6.1 5.7 5.5 2.54 mm spacing 0.8 0.4 5.9 5.5 1.8 1.2 29.5 27.5 Cathode (Diode) Collector (Transistor) ø5.1 ø4.8 4.0 3.4 Chip position 0.6 0.4 GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Stimulierter Emitter mit sehr hohem q q q q Features q Stimulated emitter with high efficiency q Laser diode in diffuse package q Suitable esp.
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