Description
Sender (IR-GaAs-Lumineszenzdiode) Emitter (GaAs infrared diode) Sperrspannung Reverse voltage Vorwärtsgleichstrom Forward current
Vorwärtsstoβstrom, tp ≤ 10 µs
Surge current Verlustleistung Power dissipation
Empfänger (Si-Fototransistor) Detector (silicon phototransistor) Kollektor-Emitter-Sperrspan
Features
- q Designed for short distances up to 5 mm q GaAs infrared emitter q Silicon NPN phototransistor detector q Flat plastic package q Daylight filter against undesired light effects q High collector-emitter current
o.25 ≥ 1.0 mA q Low saturation voltage q No cross talk.
SFH900 Datasheet
