SMBD2835
Silicon Switching Diode Array
SMBD 2835 SMBD 2836
For high-speed switching applications q mon anode q
Type SMBD 2835 SMBD 2836
Marking s A3 s A2
Ordering Code (tape and reel) Q68000-A8547 Q68000-A8436
Pin Configuration
Package1) SOT-23
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 31 ˚C Junction temperature Storage temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point Rth JA Rth JS
≤ ≤
Symbol VR VRM IF IFS Ptot Tj Tstg
Values Unit SMBD 2835 SMBD 2836 30 35 50 75 200 4.5 330 150
- 65 … + 150 m A A m W ˚C V
500 360
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
SMBD 2835 SMBD 2836
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF =...
