SMBD6050
Silicon Switching Diode q
SMBD 6050
For high-speed switching applications
Type SMBD 6050
Marking s5A
Ordering Code (tape and reel) Q68000-A8439
Pin Configuration
Package1) SOT-23
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 54 ˚C Junction temperature Storage temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point Rth JA Rth JS
≤ ≤
Symbol VR VRM IF IFS Ptot Tj Tstg
Values 70 70 250 4.5 370 150
- 65 … + 150
Unit V m A A m W ˚C
330 260
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
SMBD 6050
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 1 m A IF = 100 m A Reverse current VR = 50 V AC characteristics Diode capacitance VR = 0, f...
