SMBD6100
Silicon Switching Diode Array
For high-speed switching applications q mon cathode q
SMBD 6100
Type SMBD 6100
Marking s5B
Ordering Code (tape and reel) Q68000-A8438
Pin Configuration
Package1) SOT-23
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 35 ˚C Junction temperature Storage temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point Rth JA Rth JS
≤ ≤
Symbol VR VRM IF IFS Ptot Tj Tstg
Values 70 70 200 4.5 250 150
- 65 … + 150
Unit V m A A m W ˚C
600 460
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
SMBD 6100
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 1 m A IF = 100 m A Reverse current VR = 50 V AC characteristics Diode...
