SMBT2222 Datasheet | Siemens Semiconductor Group

NPN Silicon Switching Transistors SMBT 2222 SMBT 2222 A High DC current gain: 0.1 m A to 500 m A q Low collector-emitter saturation voltage q plementary types: SMBT 2907, SMBT 2907 A (PNP) q Type SMBT 2222 SMBT 2222 A Marking s1B s1P Ordering Code (tape and reel) Q68000-A6481 Q68000-A6473 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 77 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg Values Unit SMBT 2222 SMBT 2222 A 30 60 5 40 75 6 600 330 150 - 65 … + 150 m A m W ˚C V 290 220 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group SMBT 2222 SMBT 2222 A Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 m A SMBT 2222 SMBT 2222 A Collector-base breakdown voltage IC = 10 µA SMBT 2222 SMBT 2222 A Emitter-base breakdown voltage IE = 10 µA SMBT 2222 SMBT 2222 A Collector cutoff current VCB = 50 V VCB = 60 V VCB = 50 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Emitter cutoff current VEB = 3 V DC current gain IC = 100 µA, VCE = 10 V IC = 1 m A, VCE = 10 V IC = 10 m A, VCE = 10 V1) IC = 150 m A, VCE = 1 V1) IC = 150 m A, VCE = 10 V1) IC = 500 m A, VCE = 10 V1) IC = 10 m A, VCE = 10 V, TA = 55 ˚C SMBT 2222 SMBT 2222 A SMBT 2222 SMBT 2222 A IEB0 h FE 35 50 75 50 100 30 40 35 VCEsat - - - - VBEsat - 0.6 - - - - - - 1.3 1.2 2.6 2.0 - - - - 0.4 0.3 1.6 1.0 - - - - - - - - - - - - 300 - - - V V(BR)CE0 30 40 V(BR)CB0 60 75 V(BR)EB0 5 6...