SMBT2907
PNP Silicon Switching Transistors
SMBT 2907 SMBT 2907 A
High DC current gain: 0.1 m A to 500 m A q Low collector-emitter saturation voltage q plementary types: SMBT 2222, SMBT 2222 A (NPN) q
Type SMBT 2907 SMBT 2907 A
Marking s2B s2F
Ordering Code (tape and reel) Q68000-A6501 Q68000-A6474
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 77 ˚C Junction temperature Storage temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg
Values Unit SMBT 2907 SMBT 2907 A 40 60 60 5 600 330 150
- 65 … + 150 m A m W ˚C V
290 220
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
SMBT 2907 SMBT 2907 A
Electrical Characteristics at TA = 25 ˚C, unless otherwise...
