SMBT3906S
SMBT 3906S
PNP Silicon Switching Transistor Array
- High DC current gain: 0.1m A to 100m A
- Low collector-emitter saturation voltage
- Two ( galvanic) internal isolated Transistors with high matching in one package
- plementary type: SMBT 3904S (NPN)
4 5 6
2 1
VPS05604
Type SMBT 3906S
Marking Ordering Code s2A Q62702-A1202
Pin Configuration
Package
1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Total power dissipation, T S = 115 °C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Junction
- soldering point Symbol Value 40 40 6 200 250 150
- 65...+150 m A m W °C Unit V
VCEO VCBO VEBO IC Ptot Tj Tstg
Rth JA Rth JS
≤275 ≤140
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu Semiconductor Group Semiconductor Group 11
Sep-07-1998 1998-11-01
SMBT 3906S
Electrical Characteristics at TA =25°C, unless otherwise specified....
