SMBT6429
NPN Silicon Transistors
SMBT 6428 SMBT 6429
For AF input stages and driver applications q High current gain q Low collector-emitter saturation voltage q
Type SMBT 6428 SMBT 6429
Marking s1K s1L
Ordering Code (tape and reel) Q68000-A8321 Q68000-A8322
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VCB0 VEB0 IC Ptot Tj Tstg
Values SMBT 6428 SMBT 6429 50 60 45 55 6 200 330 150
- 65 … + 150
Unit V m A m W ˚C
310 240
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
SMBT 6428 SMBT 6429
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC...
