SMBTA20
NPN Silicon AF Transistor
High DC current gain q Low collector-emitter saturation voltage q
SMBTA 20
Type SMBTA 20
Marking s1C
Ordering Code (tape and reel) Q6800-A6477
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation, TS = 71 ˚C Junction temperature Storage temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point Rth JA Rth JS
≤ ≤
Symbol VCE0 VEB0 IC ICM IBM Ptot Tj Tstg
Values 40 4 100 200 200 330 150
- 65 … + 150
Unit V m A m W ˚C
310 240
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
SMBTA 20
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 m A Emitter-base breakdown voltage IE...
