SP0610L Datasheet | Siemens Semiconductor Group

SIPMOS® Small-Signal Transistor q VDS - 60 V q ID - 0.18 A q RDS(on) 10 Ω q P channel q Enhancement mode SP 0610L 2 3 1 Type Ordering Code Tape and Reel Information bulk Pin Configuration Marking 1 D 2 G 3 S Package SP 0610 L Q67000-S065 Maximum Ratings Parameter Drain-source voltage SP0610L TO-92 Symbol Values - 60 - 60 ± 20 - 0.18 - 0.72 0.63 - 55 … + 150 ≤ 200 - E 55/150/56 Unit V VDS VDGR VGS ID ID puls Ptot Tj, Tstg Rth JA Rth JSR TA = 25 ˚C TA = 25 ˚C Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TA = 25 ˚C Pulsed drain current, Max. power dissipation, A W ˚C K/W Operating and storage temperature range Thermal resistance, chip-ambient (without heat sink) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 - - - SP 0610L Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 m A Gate threshold voltage VGS = VDS, ID = 1 m A Zero gate voltage drain current VDS = - 60 V, VGS = 0 Tj = 25 ˚C Gate-source leakage current VGS = - 20 V, VDS = 0 Drain-source on-resistance VGS = - 10 V, ID...