SPB80N03 Overview
SPP80N03 SIPMOS® Power Transistor.
SPB80N03 Key Features
- N channel
- Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current
- Avalanche rated
- dv/dt rated
- 175°C operating temperature
- case Thermal resistance, junction
- ambient, leded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area2) Symbol min. Values typ. max. 0.5 62
- VDS≥2-ID-RDS(on)max , ID = 80 A
