SPB80N03 - SIPMOS Power Transistor

Siemens Semiconductor Group (now Infineon)

Key Features

N channel.
Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 V A Enhancement mode RDS(on) 0.006 Ω.
Avalanche rated.
dv/dt rated.
175°C operating temperature Type SPP80N03 SPB80N03 Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4734-A2 Tube P-TO263-3-2 Q67040-S4734-A3 Tabe and Reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter C.

SPB80N03 sipmos power transistor by Siemens Semiconductor Group (now Infineon) - Datasheet Preview

Datasheet Details

Part number	SPB80N03
Manufacturer	Siemens Semiconductor Group (now Infineon)
File Size	80.60 KB
Description	SIPMOS Power Transistor
Datasheet	SPB80N03 Datasheet

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Full PDF Text Transcription (Reference)

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SPP80N03 SIPMOS® Power Transistor Features • N channel • Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 V A Enhancement mode RDS(on) 0.