SRD00111Z Datasheet | Siemens Semiconductor Group

Silicon PIN Photodiode in TO-Package - - - - - - - - - - - SRD 00111Z Si-PIN-photodiode Designed for application in fiber-optic Transmission systems Sensitive receiver for the 1st window (850 nm) Suitable for bit rates up to 565 Mbit/s Low junction and low package capacitance Fast switching times Low dark current Low noise Hermetically sealed 3-pin metal case Cathode electrically isolated from case Ordering Code Q62702-P3019 Connector/Flange TO, without optics Type SRD 00111Z Maximum Ratings Parameter Reverse voltage Isolation voltage to case Junction temperature Storage temperature Soldering time (wave / dip soldering), distance between solder point and base plate ≥ 2 mm, 260 °C Symbol Values 50 100 125 - 55 … 125 10 Unit V V °C °C s VR VR Tj Tstg ts Semiconductor Group SRD 00111Z Characteristics All data refer to an ambient temperature of 25 °C. Parameter Photosensitive area Wavelength of max. sensitivity Quantumn efficiency at λ = 850 nm Spectral sensitivity λ = 850 nm λ = 950 nm Rise and fall time RL = 50 Ω, VR = 50 V, λ = 850 nm Junction capacitance at f = 1 MHz VR = 0 V VR = 1 V VR = 12 V VR = 20 V 3 d B bandwidth RL = 50 Ω, VR = 50 V, λ = 850 nm Dark current VR = 20 V, E = 0 Noise equivalent power VR = 20 V, λ = 850 nm Detectivity VR = 20 V, λ = 850 nm Temperature coefficient Ip Isolation current, VIS = 100 V Symbol Values 1 850 0.8 0.55 (≥ 0.45) 0.45 1 A/W A/W ns Unit mm2 nm λSmax η Sλ850 Sλ950 tr; tf C0 C1 C12 C20 fc ID NEP D- TC IIS 13 7 3.3 3 500 1 (≤ 5) 3.3 × 10- 14 3.1 × 1012 0.2 0.1 (≤ 1) p F p F p F p F MHz n A W/√Hz cm√Hz/W %/K n A Semiconductor Group SRD 00111Z Relative Spectral Sensitivity S = S(λ ) Photocurrent Ip = Ip (E) 100 90 80 10 70 Srel/[%] 60 50 40 30 0.1 20 10 0 400 0.01 0.001 Ip/[u A] 600 L/[nm] 800 1000 1 E/[m W/cm2] Dark Current IR = IR(VR) Dark Current IR = IR(TA) E = 0, VR = 20...