HYB39S16320TQ-6 Datasheet | Siemens Semiconductor Group

Overview HYB 39S13620TQ-6/-7/-8 - High Performance: -6 -7 125 2 8 5.5 -7 125 3 7 5.5 -8 125 3 8 6 Units MHz - ns ns - Special Mode Registers - Two color registers - Burst Read with Single Write Operation - Block Write and Write-per-Bit Capability - Byte controlled by DQM0-3 - Auto Precharge and Auto Refresh Modes - Suspend Mode and Power Down Mode - 2k refresh cycles/32 ms - t AC = 5 ns - t SETUP/t HOLD = 2 ns/1 ns - Latency 2 @ 125 MHz - Random Column Address every CLK (1-N Rule) - Single 3.3 V ± 0.3 V Power Supply - LVTTL patible inputs and outputs f CK latency 166 3 6 5.5 t CK3 t AC3 - Single Pulsed RAS Interface - Programmable CAS Latency: 2, 3 - Fully Synchronous to Positive Clock Edge - Programmable Wrap Sequence: Sequential or Interleave - Programmable Burst Length: 1, 2, 4, 8 and full page for sequential 1, 2, 4, 8 for interleave The HYB 39S163200TQ are dual bank Synchronous Graphics DRAM’s (SGRAM) organized as 2 banks × 256 Kbit × 32 with built-in graphics features . These...