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Preliminary data
SPD02N60 SPU02N60
SIPMOS® Power Transistor • N-Channel
• Enhancement mode
• Avalanche rated
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Pin 1 G
Pin 2 D
Pin 3 S
Type SPD02N60 SPU02N60
VDS
ID
600 V 2 A
RDS(on) @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251
Ordering Code Q67040-S4133 Q67040-S4127-A2
Maximum Ratings, at T j = 25 °C, unless otherwise specified Symbol Parameter Continuous drain current
Value 2 1.3 8 135
Unit A
ID
T C = 25 °C T C = 100 °C
Pulsed drain current
IDpulse EAS
T C = 25 °C
Avalanche energy, single pulse mJ
I D = 2 A, VDD = 50 V, R GS = 25 Ω, T j = 25 °C
Gate source voltage Power dissipation
VGS Ptot Tj T stg
±20 55 -55 ... +150 -55 ...
SPU02N60 Datasheet
