STM51005 Datasheet | Siemens Semiconductor Group

1300 nm Laser in Receptacle Package, Medium Power STM 51004X STM 51005X - - - - Designed for application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and control of radiant power - Hermetically sealed subponent, similar to TO 18 - SM Pigtail with optional flange Type STM 51004G STM 51004A STM 51005G STM 51005A Ordering Code Q62702-P3001 Q62702-P3050 Q62702-P3061 Q62702-P3056 Connector/Flange FC / without flange DIN / without flange FC / with flange DIN / with flange Maximum Ratings Output power ratings refer to the SM fiber output. The operating temperature of the submount is identical to the case temperature. Parameter Module Operating temperature range at case Storage temperature range Soldering temperature tmax = 10 s, 2 mm distance from bottom edge of case Laserdiode Direct forward current Radiant power CW Reverse voltage Symbol Values Unit TC Tstg TS - 40 … + 85 - 40 … + 85 260 °C °C °C IF max Φe 120 2 2 m A m W V VR max Semiconductor Group STM 51004X STM 51005X Maximum Ratings (cont’d) Parameter Monitor Diode Reverse voltage Symbol Values Unit VR max Characteristics All optical data refer to a coupled 10/125 µm SM fiber, TC = 25 °C. Parameter Laser Diode Optical output power Emission wavelength center of range Φe = 0.5 m W Spectral bandwidth Φe = 0.5 m W (RMS) Threshold current (- 40 … + 85 °C) Forward voltage Φe = 0.5 m W Radiant power at threshold Slope efficiency Differential series resistance Rise time/Fall time Monitor Diode Dark current, VR = 5 V, Φe = 0 Photo current, Φe = 0.5 m W Φe λ ∆λ > 1.2 1280 … 1330 <5 2 … 45 < 1.5 < 40 20 … 100 <8 <1 m W nm nm m A V µW m W/A Ω ns Symbol Values Unit Ith VF Φeth η r S t R, t F IR IP < 500 100 … 1000 n A µA Semiconductor Group STM 51004X STM...