SXTA42 Datasheet | Siemens Semiconductor Group

NPN Silicon High Voltage Transistors SXTA 42 SXTA 43 High breakdown voltage q Low collector-emitter saturation voltage q Type SXTA 42 SXTA 43 Marking 1D 1E Ordering Code (tape and reel) Q68000-A8394 Q68000-A8650 Pin Configuration 1 2 3 B C E Package1) SOT-89 Maximum Ratings .. Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Total power dissipation, TS = 130 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Symbol SXTA 42 VCE0 VCB0 VEB0 IC Ptot Tj Tstg 300 300 Values SXTA 43 200 200 6 500 1 150 Unit V m A W ˚C - 65 … + 150 Rth JA Rth JS ≤ ≤ 75 20 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group SXTA 42 SXTA 43 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 1 m A SXTA 42 SXTA 43 Collector-base breakdown voltage IC = 100 µA SXTA 42 SXTA 43 Emitter-base breakdown voltage IE = 100 µA Collector cutoff current VCB = 200 V, IE = 0 VCB = 160 V, IE = 0 VCB = 200 V, IE = 0, TA = 125 ˚C VCB = 160 V, IE = 0, TA = 125 ˚C Emitter-base cutoff current VEB = 6 V, IC = 0 DC current gain IC = 1 m A, VCE = 10 V IC = 10 m A, VCE = 10 V IC = 30 m A, VCE = 10 V SXTA 42 SXTA 43 SXTA 42 SXTA 43 IEB0 h FE 25 40 40 40 VCEsat - - VBEsat - - - - 0.5 0.4 0.9 - -...