Siemens BA489
Silicon PIN Diode
MAXIMUM RATINGS
Parameter Reverse voltage Forward current Junction temperature Storage temperature range Thermal Resistance Junction-ambient Symbol Values 50 50 150 – 55 … + 150 Unit V mA °C °C VR IF Tj Tstg Rth JA ≤ 300 K/W Semiconductor Group 1 10 94 BA 489ELECTRICAL CHARACTERISTICS
at TA = 25 °C, unless otherwise specified. Parameter Symbol min. DC Characteristics Forward voltage IF = 50 mA Reverse current VR = 30 V AC Characteristics Diode capacitance VR = 15 V, f = 1 MHz VR = 0 V, f = 100 MHz Forward resistance IF = 10 mA, f = 100 MHz Zero bias conductance VR = 0 V, f = 100 MHz Series inductance Value typ. max. Unit VF – – – 1 V nA – 50 IR CO – – 0.47 0.5 7.5 60 6 0.8 – pF rf 6 11 Ω µS – – nH – – gp LS Package Outline TO-92 Semiconductor Group 2 BA 489 Forward resistance rf = f (IF) f = 100 MHz Semiconductor Group 3