Siemens BA892
Silicon Rf Switching Diode Preliminary data
| Part No. | BA892 |
|---|---|
| Datasheet | BA892 Download |
| Manufacturer |  Siemens |
| Description | Silicon Rf Switching Diode Preliminary data |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 35 100 -55 ...+125 -55 ...+150 Unit V mA °C VR IF T op T stg Thermal Resistance Junction - ambient 1) RthJA ≤ 450 K/W 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Au 1998-11-01 -03-1998 BA 892ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. max. 20 1 µA V Unit IR VF - VR = 20 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.65 0.6 0.92 0.85 0.45 0.36 100 0.6 1.3 1.1 pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf 1/gp 0.7 0.5 - Ω I F = 3 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Reverse resistance kΩ nH VR = 1 V, f = 100 MHz Series inductance Ls Semiconductor Group Semiconductor Group 22 Au 1998-11-01 -03-1998 BA 892 Diode capacitance CT = f (V R) f = 1MHz EHD07009 Forward resistance rf...
